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AT-32033

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AT-32033

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Technical/Catalog Information	AT-32033-BLKG
Vendor	Avago Technologies US Inc.
Category	Discrete Semiconductor Products
Frequency - Transition	-
Noise Figure (dB Typ @ f)	1dB ~ 1.3dB @ 900MHz
Current - Collector (Ic) (Max)	32mA
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 1mA, 2.7V
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5.5V
Gain	11dB ~ 12.5dB
Power - Max	150mW
Compression Point (P1dB)	15dBm
Package / Case	SOT-23
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	AT 32033 BLKG AT32033BLKG

Product	Manufacturers	Pack	D/C
AT-32033	-	-	SOT-23

Hewlett Packard's AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them ideal for use in battery powered applications in wireless markets. The AT-32033 uses the 3 lead SOT-23, while the AT-320 11 places the same die in the higher performance 4 lead SOT-143. Both packages are industry standard, and compatible with high volume surface mount assembly techniques.

The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high performance products that can perform a multiplicity of tasks. The 20 emitter finger interdigitated geometry yields an easy to match to and extremely fast transistor with moderate power, low noise resistance, and low operating
currents.

Optimized performance at 2.7V makes these devices ideal for use in 900MHz,1.8GHz, and 2.4GHz battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Typical amplifier designs at 900 MHz yield 1.2 dB noise figures with 12 dB or more associated gain at a 2.7 V, 2 mA bias, with noise performance being relatively insensitive to input match. High gain capability at 1 V, 1 mA makes these devices a good fit for 900 MHz pager applications. Voltage breakdowns are high enough for use at 5 volts.

The AT-3 series bipolar transistors are fabricated using an optimized version of Hewlett Packard's 10 GHz f_t, 30 GHz fMAX Self-Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation,selfalignment techniques, and gold metalization in the fabrication of these devices.

Symbol	Parameter	Units	Absolute Maximum^[1]
V_EBO	Emitter-Base Voltage	V	1.5
V_CBO	Collector-Base Voltage	V	11
V_CEO	Collector-Emitter Voltage	V	5.5
I_C	Collector Current	mA	32
P_T	Power Dissipation ^[2,3]	mW	200
T_j	Junction Temperature	°C	150
T_STG	Storage Temperature	°C	-65 to 150

	Select all
	Part Number	Mfg	Pack	D/C	Qty	Note

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Models	MFG	Pack
AT-0001
AT-00017
AT-0002
AT-0017
AT-013
AT-014
AT-017
AT-101PIN
AT-106		SOP24
AT-106PIN
AT-106-PIN
AT-106-SD
AT-106-SDTR
AT-108		SOP8
AT-108TR
AT-109
AT-109H
AT-109-PIN
AT-109TR
AT-110		SOP-8
AT-110TR
AT-113		SOP8
AT-113TR
AT-118TR
AT-119
AT-119TR
AT-119TR-3000
AT-119TR-500
AT-13786-TR1(137)
AT-1380S
AT-32032-TR2G
AT-32032-TR1G
AT-32032-TR1
AT-32032-BLKG
AT-32032
AT-320240Q1
AT-32011-TR2G
AT-32011-TR1G
AT-32011-TR1
AT-32011-BLKG
AT-32011
AT-31625
AT-31033-TR2G
AT-31033-TR1G
AT-31033-BLKG
AT-31033
AT-31011-TR2G
AT-31011-TR1G
AT-31011-BLKG
AT-31011